The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2020

Filed:

Oct. 25, 2018
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Jong Mun Kim, San Jose, CA (US);

Chentsau Chris Ying, Cupertino, CA (US);

He Ren, San Jose, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Ellie Yieh, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/3213 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32137 (2013.01); H01L 23/53209 (2013.01);
Abstract

Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.


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