The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jan. 16, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lin Xue, San Diego, CA (US);

Chando Park, Palo Alto, CA (US);

Jaesoo Ahn, San Jose, CA (US);

Hsin-wei Tseng, San Jose, CA (US);

Mahendra Pakala, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10B 61/00 (2023.02); G11C 11/161 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 50/01 (2023.02);
Abstract

Implementations of the present disclosure generally relate to a memory device. More specifically, implementations described herein generally relate to a SOT-MRAM. The SOT-MRAM includes a memory cell having a magnetic storage layer disposed side by side and in contact with a SOT layer. The side by side magnetic storage layer and the SOT layer can achieve the switching of the magnetic storage layer by reversing the direction of the electrical current flowing through the SOT layer without any additional conditions.


Find Patent Forward Citations

Loading…