logo

For the Inventor, By the Inventor

Changhua, Taiwan

Cheng-Guo Chen

This inventor holds 23 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Fabrication. Top assignee: United Microelectronics Corp.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Cheng-Guo Chen. Retrieved from https://idiyas.com/inventor/cheng-guo-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 53(Granted Patents)


Location History:

  • Changhua, TW (2012 - 2013)
  • Changhua County, TW (2011 - 2020)

Company Filing History:

goldMedal23 out of 7,278 
 
United Microelectronics Corp.
 patents

Years Active: 2011-2025

Loading Chart...
Areas of Expertise:
MOS Capacitor
High-Electron Mobility Transistor
Tunneling Transistor
Field-Effect Transistor
Semiconductor Device
Epitaxial Structure
Replacement Gate Process
FinFET
Metal Gates
Photoresist Removal
Hard Mask
EFuse Structure
23 patents (USPTO):Explore Patents
1. 12283637 - MOS capacitor and fabrication method thereof (2025-04-21),
2. 12278282 - High-electron mobility transistor and method for fabricating the same (2025-04-14),
3. 10707305 - Method of fabricating tunneling transistor (2020-07-07),
4. 10276663 - Tunneling transistor and method of fabricating the same (2019-04-30),
5. 9960083 - Method for fabricating semiconductor device (2018-05-01),
6. 9384962 - Oxygen treatment of replacement work-function metals in CMOS transistor gates (2016-07-05),
7. 9318609 - Semiconductor device with epitaxial structure (2016-04-19),
8. 9312352 - Field-effect transistor and fabricating method thereof (2016-04-12),
9. 9184254 - Field-effect transistor and fabricating method thereof (2015-11-10),
10. 9159798 - Replacement gate process and device manufactured using the same (2015-10-13),
11. 9070710 - Semiconductor process (2015-06-30),
12. 8993384 - Semiconductor device and fabrication method thereof (2015-03-31),
13. 8981487 - Fin-shaped field-effect transistor (FinFET) (2015-03-17),
14. 8895396 - Epitaxial Process of forming stress inducing epitaxial layers in source and drain regions of PMOS and NMOS structures (2014-11-25),
15. 8802524 - Method of manufacturing semiconductor device having metal gates (2014-08-12),

Title: The Innovative Journey of Inventor Cheng-Guo Chen

Introduction: Cheng-Guo Chen, a talented inventor hailing from Changhua County, Taiwan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Chen's latest patents include a cutting-edge smart home device that revolutionizes household automation, a novel medical device aimed at improving patient care, and an innovative renewable energy solution for sustainable living.

Career Highlights: With a career spanning over two decades, Chen has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing innovative solutions. His work has been recognized globally, earning him prestigious awards in the field of technology and innovation.

Collaborations: Throughout his career, Chen has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has led to the successful development and commercialization of several groundbreaking products.

Conclusion: Cheng-Guo Chen's relentless passion for innovation and his commitment to pushing the boundaries of technology have solidified his position as a trailblazing inventor in the industry. His contributions continue to inspire future generations of inventors to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…