The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Jun. 07, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Ssu-I Fu, Kaohsiung, TW;
Cheng-Guo Chen, Changhua County, TW;
Yu-Hsiang Hung, Tainan, TW;
Chung-Fu Chang, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and a gate structure partially overlapping the fin-shaped structure is formed. Subsequently, a dielectric layer is blanketly formed on the substrate, and a part of the dielectric layer is removed to form a first spacer on the fin-shaped structure and a second spacer besides the fin-shaped structure. Furthermore, the second spacer and a part of the fin-shaped structure are removed to form at least a recess at a side of the gate structure, and an epitaxial layer is formed in the recess.