The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 01, 2018
Filed:
Nov. 02, 2016
United Microelectronics Corp., Hsin-Chu, TW;
Tai-You Chen, Changhua County, TW;
Cheng-Guo Chen, Changhua County, TW;
Kun-Yuan Wu, Kaohsiung, TW;
Chiu-Sheng Ho, Taichung, TW;
Po-Kang Yang, Taoyuan, TW;
Ta-Kang Lo, Taoyuan, TW;
Shang-Jr Chen, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
First, a substrate having a first region and a second region is provided, a first gate structure is formed on the first region and a second gate structure is formed on the second region, an interlayer dielectric (ILD) layer is formed around the first gate structure and the second gate structure, and the first gate structure and the second gate structure are removed to expose the substrate on the first region and the second region. Next, part of the substrate on the first region is removed to form a first recess and part of the substrate on the second region is removed to form a second recess, in which the depths of the first recess and the second recess are different. Next, a first metal gate is formed on the first region and a second metal gate is formed on the second region.