Po-Kang Yang

Title: Po-Kang Yang: Innovator in Triboelectric Nanogenerators and Tunneling Transistors

Introduction

Po-Kang Yang is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the fields of nanotechnology and semiconductor devices. With a total of 4 patents, Yang's work focuses on innovative solutions that enhance energy generation and electronic device performance.

Latest Patents

Yang's latest patents include a triboelectric nanogenerator structure and a method of fabricating a tunneling transistor. The triboelectric nanogenerator structure consists of an upper electrode layer made of a hybrid gel, a lower triboelectric layer, and a lower electrode layer. This innovative design allows for efficient energy conversion. The tunneling transistor patent describes a fin-shaped structure that integrates source and drain structures of complementary conductivity types, enhancing the performance of electronic devices.

Career Highlights

Throughout his career, Po-Kang Yang has worked with notable organizations such as United Microelectronics Corporation and Tsinghua University. His experience in these institutions has allowed him to develop cutting-edge technologies and contribute to advancements in the semiconductor industry.

Collaborations

Yang has collaborated with esteemed colleagues, including Tai-You Chen and Cheng-Guo Chen. These partnerships have fostered a collaborative environment that promotes innovation and research in their respective fields.

Conclusion

Po-Kang Yang's contributions to the fields of triboelectric nanogenerators and tunneling transistors highlight his role as a leading inventor. His innovative patents and collaborations continue to influence advancements in technology and energy solutions.