The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2020
Filed:
Mar. 14, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Cheng-Guo Chen, Changhua County, TW;
Kun-Yuan Wu, Kaohsiung, TW;
Tai-You Chen, Changhua County, TW;
Chiu-Sheng Ho, Taichung, TW;
Po-Kang Yang, Taoyuan, TW;
Ta-Kang Lo, Taoyuan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A tunneling transistor and a method of fabricating the same, the tunneling transistor includes a fin shaped structure, a source structure and a drain structure, and a gate structure. The fin shaped structure is disposed in a substrate, and the source structure and the drain structure are disposed the fin shaped structure, wherein an entirety of the source structure and an entirety of the drain structure being of complementary conductivity types with respect to one another and having different materials. A channel region is disposed in the fin shaped structure between the source structure and the drain structure and the gate structure is disposed on the channel region. That is, a hetero tunneling junction is vertically formed between the channel region and the source structure, and between the channel region and the drain structure in the fin shaped structure.