The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Jul. 11, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Ssu-I Fu, Kaohsiung, TW;
Yu-Hsiang Hung, Tainan, TW;
Cheng-Guo Chen, Changhua County, TW;
Chung-Fu Chang, Tainan, TW;
Chien-Ting Lin, Hsinchu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An epitaxial process includes the following steps. A first gate and a second gate are formed on a substrate. Two first spacers are formed on the substrate beside the first gate and the second gate respectively. Two first epitaxial layers having first profiles are formed in the substrate beside the two first spacers respectively. A second spacer material is formed to cover the first gate and the second gate. The second spacer material covering the second gate is etched to form a second spacer on the substrate beside the second gate and expose the first epitaxial layer beside the second spacer while reserving the second spacer material covering the first gate. The exposed first epitaxial layer in the substrate beside the second spacer is replaced by a second epitaxial layer having a second profile different from the first profile.