The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
May. 02, 2013
Applicant:
United Microelectronics Corporation, Hsinchu, TW;
Inventors:
Kun-Yuan Lo, Tainan, TW;
Chih-Wei Yang, Kaohsiung, TW;
Cheng-Guo Chen, Changhua County, TW;
Rai-Min Huang, Taipei, TW;
Jian-Cun Ke, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/28088 (2013.01); H01L 29/66545 (2013.01);
Abstract
A field-effect transistor comprises a substrate, a gate dielectric layer, a barrier layer, a metal gate electrode and a source/drain structure. The gate dielectric layer is disposed on the substrate. The barrier layer having a titanium-rich surface is disposed on the gate dielectric layer. The metal gate electrode is disposed on the titanium-diffused surface. The source/drain structure is formed in the substrate and adjacent to the metal gate electrode.