Company Filing History:

8 out of 3,345

At&t Bell Laboratories

Lucent Technologies Inc.

patents

Years Active: 1991-1999

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21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5880022 - Self-aligned contact window (1999-03-09),

2. 5654240 - Integrated circuit fabrication having contact opening (1997-08-05),

3. 5599730 - Poly-buffered LOCOS (1997-02-04),

4. 5591674 - Integrated circuit with silicon contact to silicide (1997-01-07),

5. 5559052 - Integrated circuit fabrication with interlevel dielectric (1996-09-24),

6. 5468669 - Integrated circuit fabrication (1995-11-21),

7. 5451435 - Method for forming dielectric (1995-09-19),

8. 5431770 - Transistor gate formation (1995-07-11),

9. 5418173 - Method of reducing ionic contamination in integrated circuit fabrication (1995-05-23),

10. 5416033 - Integrated circuit and manufacture (1995-05-16),

11. 5411899 - Transistor fabrication of a twin tub using angled implant (1995-05-02),

12. 5399532 - Integrated circuit window etch and planarization (1995-03-21),

13. 5395799 - Method of fabricating semiconductor devices having electrodes comprising (1995-03-07),

14. 5366557 - Method and apparatus for forming integrated circuit layers (1994-11-22),

15. 5302555 - Anisotropic deposition of dielectrics (1994-04-12),

Title: **Innovative Contributions of Chen-Hua D Yu in Semiconductor Technology**

Introduction

Chen-Hua D Yu, based in Allentown, PA, is a notable figure in the field of semiconductor technology, holding an impressive total of 21 patents. His work has significantly impacted innovations related to integrated circuit fabrication, showcasing his expertise and creativity as an inventor.

Latest Patents

Among Chen-Hua D Yu's latest innovations are two influential patents. The first is focused on a self-aligned contact window, which involves the formation of a contact to the substrate situated between two gate electrodes. This patent emphasizes the use of a conformal dielectric layer and careful patterning to retain the integrity of the conductive elements in the gate structure, thereby preventing unnecessary contact due to etch rate differentials.

The second innovation concerns integrated circuit fabrication and outlines a method specifically applicable for fabricating contacts to sources and drains, particularly in SRAM applications. This method involves forming and patterning a dielectric layer and an overlying polysilicon conductor to expose the semiconductor substrate. A silicide layer is subsequently deposited, ensuring reliable electrical contact while minimizing the risk of trenching into the substrate during the subsequent patterning process.

Career Highlights

Chen-Hua D Yu has garnered extensive experience throughout his career, notably at AT&T Bell Laboratories and AT&T Corporation. His roles at these renowned companies allowed him to cultivate his skills and contribute to advancements in semiconductor research and development.

Collaborations

Throughout his career, Chen-Hua has collaborated with esteemed peers, including Kuo-Hua Lee and Ajit S Manocha. These collaborative efforts have not only enhanced his innovations but also fostered a spirit of teamwork in the pursuit of cutting-edge solutions in the semiconductor industry.

Conclusion

Chen-Hua D Yu stands out as a pioneering inventor, with a rich portfolio of patents that reflect his innovative contributions to semiconductor technology. His work continues to influence the landscape of integrated circuit fabrication, underlining the importance of creativity and collaboration in driving advancements in the field.

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