The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 1996
Filed:
Dec. 29, 1994
Applicant:
Inventors:
Kuo-Hua Lee, Orlando, FL (US);
Chen-Hua D Yu, Orlando, FL (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437195 ; 437240 ; 437978 ;
Abstract
An interlevel dielectric comprised of phosphorus-doped glass surrounding the second polysilicon level of an SRAM cell is disclosed. The second polysilicon is generally a cell local interconnect. The phosphorus-doped glass layer efficiently getters sodium from underlying layers. The phosphorus-doped glass layer is utilized although another doped gettering layer may be used at a higher level of the circuit.