The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1994
Filed:
Apr. 06, 1993
Applicant:
Inventor:
Chen-Hua D Yu, Allentown, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437235 ; 437238 ; 437243 ; 427535 ;
Abstract
A method for anisotropically depositing a dielectric from a precursor gas in a reactor is disclosed. The method includes reduced pressure, reduced oxygen/precursor gas flow ratio, increased spacing between shower head and susceptor; and also a susceptor having a diameter greater than the diameter of the wafer.
Yu, Chen-Hua. (1994). Anisotropic deposition of dielectrics (U.S. Patent No. 5302555). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5302555
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile