The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 1995
Filed:
Oct. 13, 1993
Applicant:
Inventors:
Kuo-Hua Lee, Wescosville, PA (US);
Chen-Hua D Yu, Allentown, PA (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566531 ; 437228 ;
Abstract
A method for forming transistors having sublithographic features, for example, gates, is disclosed. A patterned hardmask (formed, for example from PETEOS) is created overlying oxide and polysilicon layers. The dimensions of the hardmask are reduced by isotropic etching. The reduced-dimension hardmask is used with an anisotropic etching process to define a reduced-dimension feature such as a gate.