The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 1997
Filed:
Dec. 08, 1994
Applicant:
Inventors:
Kuo-Hua Lee, Orlando, FL (US);
Chen-Hua D Yu, Orlando, FL (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 69 ; 437984 ;
Abstract
A method of field oxide formation which creates field oxides of comparatively uniform height between differently-spaced oxidation masks is disclosed. A patterned oxidation mask, typically silicon nitride, (possibly with underlying polysilicon) is formed. A blanket layer of polysilicon is formed and etched back, thereby filling spaces between closely-spaced portions of the oxidation mask and fillets between less-closely spaced portions. A thermal oxidation is performed to produce a field oxide. The field oxide has comparatively uniform height despite differences in oxidation mask spacing.