The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 21, 1995
Filed:
Oct. 29, 1993
Applicant:
Inventors:
Kuo-Hua Lee, Wescosville, PA (US);
Horng-dar Lin, Holmdel, NJ (US);
Ran-Hong Yan, Holmdel, NJ (US);
Chen-Hua D Yu, Allentown, PA (US);
Assignee:
AT&T Corp., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 51 ; 437 56 ; 437192 ; 437193 ; 437200 ; 437956 ; 148D / ;
Abstract
A semiconductor integrated circuit, and process for its manufacture, are disclosed which contains both n.sup.+ and p.sup.+ gates that do not pose a risk of dopant interdiffusion. Both n.sup.+ and p.sup.+ gates may be fabricated by conventional means. The gate structures are severed over the tub boundaries. A titanium nitride interconnective layer is deposited and patterned over the gates. The interconnective layer preserves connectivity between the n.sup.+ and p.sup.+ gates without risk of deleterious dopant interdiffusion.