The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 1995
Filed:
Oct. 04, 1993
Chen-Hua D Yu, Allentown, PA (US);
AT&T Corp., Murray Hill, NJ (US);
Abstract
A workpiece is formed comprising a silicon substrate covered by four successive layers of silicon dioxide, undoped polysilicon, undoped WSi.sub.2 and a top layer of silicon dioxide on silicon nitride. The four layers are patterned to provide gate electrode structures each comprising the four layers. The workpiece is covered with a masking layer and the top layer of each structure is exposed through the masking layer. The top layers are then removed and ions of one conductivity type are implanted into the WSi.sub.2 layers of one group of gate electrode structures while another group of structures is masked, and ions of the other conductivity type are implanted into the WSi.sub.2 layers of the second group while the first group is masked. Thereafter, doped regions are formed in the substrate adjacent to the gate electrode structures.