The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 1997
Filed:
Apr. 12, 1996
Applicant:
Inventors:
Kuo-Hua Lee, Westcosville, PA (US);
Chen-Hua Douglas Yu, Allentown, PA (US);
Assignee:
Lucent Technologies Inc., Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438647 ; 438586 ; 438669 ;
Abstract
A method of semiconductor fabrication having applicability to forming contacts to sources and drains especially in SRAM applications is disclosed. A dielectric and an overlying polysilicon conductor are formed and patterned thereby exposing a semiconductor substrate. A silicide layer is deposited, thereby contacting the polysilicon layer and the substrate. Subsequent patterning of the silicide layer using an oxide hard mask provides electrical contact between the polysilicon layer and the substrate without the risk of trenching into the substrate.