Byung-Hak Lee

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Hak Lee. Retrieved from https://idiyas.com/inventor/byung-hak-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 18

% Patents Active = 55.6

Average Co-Inventor Count = 7.0

ph-index = 5

Forward Citations = 94(Granted Patents)

Location History:

Gyeonggi-do, KR (2008 - 2011)
Suwon-si, KR (2009 - 2011)
Hwaseong-si, KR (2013)

Company Filing History:

18 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2008-2013

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Areas of Expertise:

Semiconductor Device

Gate Structure

High-k Dielectrics

Buried Wiring

Field Effect Transistors

Ohmic Layer

Recessed Gate Electrodes

Leakage Barrier Oxides

Polymetal Gate Electrodes

Gate Dielectrics

Manufacturing Methods

Semiconductor Materials

18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8470703 - Semiconductor device and method of fabricating the same (2013-06-25),

2. 8466052 - Method of fabricating semiconductor device having buried wiring (2013-06-18),

3. 8034701 - Methods of forming recessed gate electrodes having covered layer interfaces (2011-10-11),

4. 7989892 - Gate structure, and semiconductor device having a gate structure (2011-08-02),

5. 7879737 - Methods for fabricating improved gate dielectrics (2011-02-01),

6. 7875939 - Semiconductor device including an ohmic layer (2011-01-25),

7. 7781849 - Semiconductor devices and methods of fabricating the same (2010-08-24),

8. 7772637 - Semiconductor devices including gate structures and leakage barrier oxides (2010-08-10),

9. 7759263 - Methods for fabricating improved gate dielectrics (2010-07-20),

10. 7696552 - Semiconductor devices including high-k dielectric materials (2010-04-13),

11. 7582931 - Recessed gate electrodes having covered layer interfaces and methods of forming the same (2009-09-01),

12. 7582924 - Semiconductor devices having polymetal gate electrodes (2009-09-01),

13. 7550353 - Method of forming semiconductor device (2009-06-23),

14. 7544597 - Method of forming a semiconductor device including an ohmic layer (2009-06-09),

15. 7534709 - Semiconductor device and method of manufacturing the same (2009-05-19),

Title: Byung-Hak Lee: Innovator in Semiconductor Technology

Introduction

Byung-Hak Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 18 patents. His work has been instrumental in advancing the methods used in semiconductor fabrication.

Latest Patents

One of his latest patents is focused on a semiconductor device and the method of fabricating the same. This method involves providing a substrate that includes a source and a drain region of a transistor. A nickel (Ni) metal film is formed on this substrate area. The process includes a first heat-treatment that heats the substrate from a first temperature to a second temperature, followed by a second heat-treatment that involves different temperatures and time periods. This innovative approach converts the Ni metal layer into a NiSi layer, enhancing the performance of the semiconductor device.

Another notable patent by Lee is a method of fabricating a semiconductor device with buried wiring. This method includes forming a trench in a semiconductor substrate and applying a first conductive layer on the trench surfaces. A second conductive layer is then selectively formed on the first layer using advanced techniques such as electroless plating or chemical vapor deposition methods. These patents reflect Lee's commitment to improving semiconductor technology.

Career Highlights

Byung-Hak Lee is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work at Samsung has allowed him to collaborate with some of the brightest minds in the field, contributing to groundbreaking advancements in semiconductor technology.

Collaborations

Lee has worked alongside talented colleagues such as Hee-Sook Park and Gil-heyun Choi. Their collaborative efforts have led to significant innovations in semiconductor fabrication methods.

Conclusion

Byung-Hak Lee's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the industry. His advancements continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]