The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Jun. 03, 2005
Applicants:
Byung-hak Lee, Gyeonggi-do, KR;
Chang-won Lee, Gyeonggi-do, KR;
Hee-sook Park, Seoul, KR;
Woong-hee Sohn, Seoul, KR;
Sun-pil Youn, Seoul, KR;
Jong-ryeol Yoo, Gyeonggi-do, KR;
Inventors:
Byung-Hak Lee, Gyeonggi-do, KR;
Chang-Won Lee, Gyeonggi-do, KR;
Hee-Sook Park, Seoul, KR;
Woong-Hee Sohn, Seoul, KR;
Sun-Pil Youn, Seoul, KR;
Jong-ryeol Yoo, Gyeonggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate electrode of a transistor can include an interface between a polysilicon conformal layer and a tungsten layer thereon in a trench in a substrate and a capping layer extending across the trench and covering the interface. Related methods are also disclosed.