The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Mar. 13, 2007
Byung-hak Lee, Gyeonggi-do, KR;
Woong-hee Sohn, Seoul, KR;
Jae-hwa Park, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Hee-sook Park, Seoul, KR;
Byung-Hak Lee, Gyeonggi-do, KR;
Woong-Hee Sohn, Seoul, KR;
Jae-Hwa Park, Gyeonggi-do, KR;
Gil-Heyun Choi, Seoul, KR;
Byung-Hee Kim, Seoul, KR;
Hee-Sook Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
One embodiment of a method for forming a semiconductor device can include forming a gate pattern on a semiconductor substrate and performing a selective re-oxidation process on the gate pattern in gas ambient including hydrogen, oxygen, and nitrogen. When the gate pattern includes a tunnel insulation layer, a metal nitride layer and a metal layer, the selective re-oxidation process heals the etching damage of a gate pattern and simultaneously prevents oxidation of the metal nitride layer and a tungsten electrode.