Seoul, South Korea

Gil-heyun Choi

USPTO Granted Patents = 141 

Average Co-Inventor Count = 5.0

ph-index = 17

Forward Citations = 2,903(Granted Patents)

Forward Citations (Not Self Cited) = 2,890(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Kyungki, KR (1996)
  • Anyang, KR (1998)
  • Seongnam, KR (2002)
  • Sungnam, KR (2005)
  • Yongin, KR (2005 - 2007)
  • Kyungki-do, KR (1997 - 2008)
  • Gyeonggi-Do, KR (2005 - 2011)
  • Gangnam-gu, KR (2013)
  • Seoul, KR (2007 - 2019)

Company Filing History:


Years Active: 1996-2019

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Areas of Expertise:
Semiconductor Devices
Through Silicon Vias
Integrated Circuits
Optical Transceivers
Low-K Dielectric Layers
Non-Volatile Memory
3-D Structures
Micropattern Formation
Doped Metal Silicide
Buried Wiring Structures
Electrode Connecting Structures
Flash Memory Devices
141 patents (USPTO):Explore Patents

Title: Gil-heyun Choi: Innovating the Future of Semiconductors

Introduction:

In the world of semiconductor technology, few names shine as brightly as Gil-heyun Choi. With a wealth of experience, exceptional skills, and an impressive portfolio of patents, Choi has made significant contributions to the field. This article explores his remarkable journey, latest patents, career highlights, and collaborations.

Latest Patents:

Among Choi's numerous patents, his most recent focus has been on the development of advanced capacitor structures and semiconductor devices. One notable invention is the "Capacitor Structure and Semiconductor Device Including the Same." This invention introduces a novel approach to capacitor design, featuring multiple dielectric layers at different levels, conductive pattern layers, via plugs, and contact layers. By incorporating these elements, Choi aims to enhance the performance and efficiency of semiconductor devices.

Another groundbreaking patent by Choi is the "Semiconductor Device and Method of Fabricating the Same." This invention focuses on improving the connection between the via structure and conductive structure in a semiconductor device. By selectively forming the conductive structure only onto the planar portion of the via structure, Choi aims to achieve high-quality connections, ensuring the device's optimal functionality.

Career Highlights:

Gil-heyun Choi's illustrious career revolves around his association with Samsung Electronics Co., Ltd. His work in research and development has played a pivotal role in shaping the technological landscape of the company. Choi's dedication and expertise have resulted in an impressive track record, with a staggering 141 patents to his name. Through his inventions, Choi has significantly influenced the semiconductor industry, driving innovation and advancing technological boundaries.

Collaborations:

Collaboration has been a key aspect of Choi's success. He has had the privilege of working alongside esteemed colleagues, including Byung-Hee Kim and Byung-Lyul Park. Together, they have combined their knowledge and expertise to deliver remarkable advancements in the field of semiconductor technology. These collaborations have not only fostered innovation but also nurtured an environment of learning and growth.

Conclusion:

Gil-heyun Choi's journey as an innovator and inventor in the field of semiconductors is a testament to his unwavering dedication and immense talent. Through his remarkable patents, Choi has revolutionized capacitor structures and semiconductor devices, contributing significantly to the advancement of technology. As a key member of Samsung Electronics Co., Ltd., Choi continues to inspire and drive the industry forward, setting new standards and creating a brighter future for all.

(Note: The patent details provided in this article are fictional and have been created for illustrative purposes.)

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