The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Apr. 19, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Jae-woo Kim, Bucheon-si, KR;
Chul-ki Kim, Suwon-si, KR;
Chul-wan Kim, Suwon-si, KR;
Yu-kyung Park, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A capacitor structure includes a substrate including an electrode pad and a ground pad, a plurality of dielectric layers on the substrate, the plurality of dielectric layers being at different levels on the substrate, a plurality of conductive pattern layers in at least two dielectric layers of the plurality of dielectric layers, the at least two dielectric layers of the plurality of dielectric layers being first dielectric layers, a plurality of via plugs connecting the plurality of conductive pattern layers to each other, and at least one contact layer in at least one second dielectric layer of the plurality of dielectric layers, the at least one second dielectric layer being different from the at least two first dielectric layers, and the at least one contact layer electrically connecting the plurality of conductive pattern layers to the electrode pad and the ground pad.