The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2015
Filed:
Sep. 14, 2012
Jin-ho Park, Yongin-si, KR;
Gil-heyun Choi, Seoul, KR;
Byung-lyul Park, Seoul, KR;
Jong-myeong Lee, Seongnam-si, KR;
Zung-sun Choi, Seoul, KR;
Hye-kyung Jung, Seoul, KR;
Jin-Ho Park, Yongin-si, KR;
Gil-Heyun Choi, Seoul, KR;
Byung-Lyul Park, Seoul, KR;
Jong-Myeong Lee, Seongnam-si, KR;
Zung-Sun Choi, Seoul, KR;
Hye-Kyung Jung, Seoul, KR;
Abstract
A semiconductor device can include an insulation layer on that is on a substrate on which a plurality of lower conductive structures are formed, where the insulation layer has an opening. A barrier layer is on a sidewall and a bottom of the opening of the insulation layer, where the barrier layer includes a first barrier layer in which a constituent of a first deoxidizing material is richer than a metal material in the first barrier layer and a second barrier layer in which a metal material in the second barrier layer is richer than a constituent of a second deoxidizing material. An interconnection is in the opening of which the sidewall and the bottom are covered with the barrier layer, the interconnection is electrically connected to the lower conductive structure.