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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9236349 B1

PDFFull Text
Date of Patent:
Jan. 12, 2016

Filed:

Jul. 17, 2013

Semiconductor device including through via structures and redistribution structures

Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, KR;

Inventors:

Kyu-Ha Lee, Yongin-Si, KR;

Pil-Kyu Kang, Anyang-Si, KR;

Tae-Yeong Kim, Suwon-Si, KR;

Ho-Jin Lee, Seoul, KR;

Byung-Lyul Park, Seoul, KR;

Gil-Heyun Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, P.A.

Primary Examiner:

William Harriston

Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/485 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/525 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/485 (2013.01); H01L 24/00 (2013.01); H01L 21/6836 (2013.01); H01L 21/76834 (2013.01); H01L 23/525 (2013.01); H01L 23/53238 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/13091 (2013.01);
Abstract

Semiconductor device including through via structure and redistribution structures is provided. The semiconductor device may include internal circuits on a first side of a substrate, a through via structure vertically penetrating the substrate to be electrically connected to one of the internal circuits, a redistribution structure on a second side of the substrate and electrically connected to the through via structure, and an insulating layer between the second side of the substrate and the redistribution structure. The redistribution structure may include a redistribution barrier layer and a redistribution metal layer, and the redistribution barrier layer may extend on a bottom surface of the redistribution metal layer and may partially surround a side of the redistribution metal layer.

Find Patent Forward Citations

Lee, Kyu-Ha. (2016). Semiconductor device including through via structures and redistribution structures (U.S. Patent No. 9236349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9236349

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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