The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jun. 17, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Do-Sun Lee, Gwangju, KR;
Kun-Sang Park, Hwaseong-si, KR;
Byung-Lyul Park, Seoul, KR;
Seong-min Son, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/2885 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/73104 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01);
Abstract
An integrated circuit device including a through-silicon-via (TSV) structure and methods of manufacturing the same are provided. The integrated circuit device may include the TSV structure penetrating through a semiconductor structure. The TSV structure may include a first through electrode unit including impurities of a first concentration and a second through electrode unit including impurities of a second concentration greater than the first concentration.