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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496218 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Jun. 17, 2013

Integrated circuit device having through-silicon-via structure

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Do-Sun Lee, Gwangju, KR;

Kun-Sang Park, Hwaseong-si, KR;

Byung-Lyul Park, Seoul, KR;

Seong-min Son, Hwaseong-si, KR;

Gil-heyun Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A.

Primary Examiner:

Jerome Jackson, Jr

Assistant Examiner:

Fang-Xing Jiang

Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/2885 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/73104 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1461 (2013.01);
Abstract

An integrated circuit device including a through-silicon-via (TSV) structure and methods of manufacturing the same are provided. The integrated circuit device may include the TSV structure penetrating through a semiconductor structure. The TSV structure may include a first through electrode unit including impurities of a first concentration and a second through electrode unit including impurities of a second concentration greater than the first concentration.

Find Patent Forward Citations

Lee, Do-Sun. (2016). Integrated circuit device having through-silicon-via structure (U.S. Patent No. 9496218). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9496218

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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