The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Jan. 06, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Jin-ho Chun, Seoul, KR;

Byung-Iyul Park, Seoul, KR;

Hyun-soo Chung, Hwaseong-si, KR;

Gil-heyun Choi, Seoul, KR;

Son-kwan Hwang, Suwon-wi, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/24 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 23/544 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 21/768 (2013.01); H01L 21/76841 (2013.01); H01L 23/481 (2013.01); H01L 23/544 (2013.01); H01L 24/03 (2013.01); H01L 24/81 (2013.01); H01L 25/065 (2013.01); H01L 25/0657 (2013.01); H01L 23/3128 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/8185 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/06 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15788 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18161 (2013.01);
Abstract

A semiconductor chip including through silicon vias (TSVs), wherein the TSVs may be prevented from bending and the method of fabricating the semiconductor chip may be simplified, and a method of fabricating the semiconductor chip. The semiconductor chip includes a silicon substrate having a first surface and a second surface; a plurality of TSVs which penetrate the silicon substrate and protrude above the second surface of the silicon substrate; a polymer pattern layer which is formed on the second surface of the silicon substrate, surrounds side surfaces of the protruding portion of each of the TSVs, and comprises a flat first portion and a second portion protruding above the first portion; and a plated pad which is formed on the polymer pattern layer and covers a portion of each of the TSVs exposed from the polymer pattern layer.


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