The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Dec. 18, 2012
Applicants:
Ho-jin Lee, Seoul, KR;
Pil-kyu Kang, Anyang-si, KR;
Kyu-ha Lee, Yongin-si, KR;
Byung-lyul Park, Seoul, KR;
Hyun-soo Chung, Hwaseong-si, KR;
Gil-heyun Choi, Seoul, KR;
Inventors:
Ho-Jin Lee, Seoul, KR;
Pil-Kyu Kang, Anyang-si, KR;
Kyu-Ha Lee, Yongin-si, KR;
Byung-Lyul Park, Seoul, KR;
Hyun-Soo Chung, Hwaseong-si, KR;
Gil-Heyun Choi, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/76898 (2013.01); H01L 24/05 (2013.01); H01L 2224/05027 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/05 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/16145 (2013.01);
Abstract
A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.