The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2010

Filed:

Dec. 03, 2008
Applicants:

Jong-min Baek, Suwon-si, KR;

Seong-hwee Cheong, Seoul, KR;

Gil-heyun Choi, Seoul, KR;

Tae-ho Cha, Yongin-si, KR;

Hee-sook Park, Seoul, KR;

Byung-hak Lee, Suwon-si, KR;

Jae-hwa Park, Yongsin-si, KR;

Inventors:

Jong-min Baek, Suwon-si, KR;

Seong-hwee Cheong, Seoul, KR;

Gil-heyun Choi, Seoul, KR;

Tae-ho Cha, Yongin-si, KR;

Hee-sook Park, Seoul, KR;

Byung-hak Lee, Suwon-si, KR;

Jae-hwa Park, Yongsin-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are semiconductor devices and methods of fabricating the same, and more specifically, semiconductor devices having a W—Ni alloy thin layer that has a low resistance, and methods of fabricating the same. The semiconductor devices include the W—Ni alloy thin layer. The weight of Ni in the W—Ni alloy thin layer may be in a range from approximately 0.01 to approximately 5.0 wt % of the total weight of the W—Ni alloy thin layer.


Find Patent Forward Citations

Loading…