The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jun. 12, 2009
Applicants:
Tae-ho Cha, Gyeonggi-do, KR;
Seong-hwee Cheong, Seoul, KR;
Jong-min Baek, Gyeonggi-do, KR;
Jae-hwa Park, Gyeonggi-do, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hee Kim, Seoul, KR;
Byung-hak Lee, Gyeonggi-do, KR;
Hee-sook Park, Seoul, KR;
Inventors:
Tae-Ho Cha, Gyeonggi-do, KR;
Seong-Hwee Cheong, Seoul, KR;
Jong-Min Baek, Gyeonggi-do, KR;
Jae-Hwa Park, Gyeonggi-do, KR;
Gil-Heyun Choi, Seoul, KR;
Byung-Hee Kim, Seoul, KR;
Byung-Hak Lee, Gyeonggi-do, KR;
Hee-Sook Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride layer.