The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Jul. 31, 2009
Byung-hak Lee, Gyeonggi-do, KR;
Chang-won Lee, Gyeonggi-do, KR;
Hee-sook Park, Seoul, KR;
Woong-hee Sohn, Seoul, KR;
Sun-pil Youn, Seoul, KR;
Jong-ryeol Yoo, Gyeonggi-Do, KR;
Byung-Hak Lee, Gyeonggi-do, KR;
Chang-Won Lee, Gyeonggi-do, KR;
Hee-Sook Park, Seoul, KR;
Woong-Hee Sohn, Seoul, KR;
Sun-Pil Youn, Seoul, KR;
Jong-ryeol Yoo, Gyeonggi-Do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.