The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 18, 2013
Filed:
Feb. 11, 2010
Jong-min Baek, Suwon-si, KR;
Hee-sook Park, Hwaseong-si, KR;
Seong-hwee Cheong, Seoul, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hak Lee, Hwaseong-si, KR;
Tae-ho Cha, Yongin-si, KR;
Jae-hwa Park, Yongin-si, KR;
Su-kyoung Kim, Suwon-si, KR;
Jong-min Baek, Suwon-si, KR;
Hee-sook Park, Hwaseong-si, KR;
Seong-hwee Cheong, Seoul, KR;
Gil-heyun Choi, Seoul, KR;
Byung-hak Lee, Hwaseong-si, KR;
Tae-ho Cha, Yongin-si, KR;
Jae-hwa Park, Yongin-si, KR;
Su-kyoung Kim, Suwon-si, KR;
Abstract
A method of fabricating a semiconductor device can include forming a trench in a semiconductor substrate, forming a first conductive layer on a bottom surface and side surfaces of the trench, and selectively forming a second conductive layer on the first conductive layer to be buried in the trench. The second conductive layer may be formed selectively on the first conductive layer by using an electroless plating method or using a metal organic chemical vapor deposition (MOCVD) or an atomic layer deposition (ALD) method.