The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Apr. 07, 2006
Byung-hak Lee, Suwon-si, KR;
Dong-chan Lim, Yongin-si, KR;
Gil-heyun Choi, Yongin-si, KR;
Hee-sook Park, Seoul, KR;
Byung-Hak Lee, Suwon-si, KR;
Dong-Chan Lim, Yongin-si, KR;
Gil-Heyun Choi, Yongin-si, KR;
Hee-Sook Park, Seoul, KR;
Abstract
Semiconductor devices and methods of fabricating the same are provided. A gate insulating film is provided on a semiconductor substrate. A polymetal gate electrode is provided on the gate insulating film. The polymetal gate electrode includes a conductive polysilicon film on the gate insulating film, a first metal silicide film on the conductive polysilicon film, a barrier film on the first metal silicide film, and a metal film on the barrier film. The barrier film includes a titanium nitride (TiN) film on the first metal silicide film and a buffer layer between the TiN film and the metal film.