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Sungnam, South Korea

Gil-Heyun Choi

This inventor holds 11 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2002-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Gil-Heyun Choi. Retrieved from https://idiyas.com/inventor/gil-heyun-choi-2wmunqdg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 11

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 853(Granted Patents)


Location History:

  • Sungnam, KR (2002 - 2004)
  • Gyeonggi-do, KR (2004)
  • Yongin-si, KR (2004 - 2010)

Company Filing History:

goldMedal11 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2002-2010

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11 patents (USPTO):Explore Patents
1. 7687331 - Stacked semiconductor device and method of fabrication (2010-03-30),
2. 7582924 - Semiconductor devices having polymetal gate electrodes (2009-09-01),
3. 7381989 - Semiconductor device including upper and lower transistors and interconnection between upper and lower transistors (2008-06-03),
4. 6821572 - Method of cleaning a chemical vapor deposition chamber (2004-11-23),
5. 6815285 - Methods of forming dual gate semiconductor devices having a metal nitride layer (2004-11-09),
6. 6787468 - Method of fabricating metal lines in a semiconductor device (2004-09-07),
7. 6699790 - Semiconductor device fabrication method for filling high aspect ratio openings in insulators with aluminum (2004-03-02),
8. 6432820 - Method of selectively depositing a metal layer in an opening in a dielectric layer by forming a metal-deposition-prevention layer around the opening of the dielectric layer (2002-08-13),
9. 6399491 - Method of manufacturing a barrier metal layer using atomic layer deposition (2002-06-04),
10. 6391769 - Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby (2002-05-21),
11. 6348376 - Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same (2002-02-19),

Title: The Innovative Contributions of Gil-Heyun Choi

Introduction

Gil-Heyun Choi is a prominent inventor based in Sungnam, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 11 patents. His work focuses on advancing the design and fabrication of semiconductor devices, which are crucial for modern electronics.

Latest Patents

Among his latest patents, Choi has developed a stacked semiconductor device and a method of fabrication. This innovative device features a lower transistor formed on a semiconductor substrate, along with an upper transistor and interlevel insulation films. The design includes a contact plug that connects the drain or source regions of both transistors, enhancing the device's performance. Another notable patent involves semiconductor devices with polymetal gate electrodes. This invention includes a gate insulating film and a polymetal gate electrode that consists of multiple layers, improving the efficiency and reliability of semiconductor devices.

Career Highlights

Choi is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to push the boundaries of semiconductor technology, contributing to the company's reputation for innovation and excellence in the electronics industry.

Collaborations

Throughout his career, Choi has collaborated with esteemed colleagues, including Byung-Hee Kim and Jong-Myeong Lee. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Gil-Heyun Choi's contributions to the field of semiconductor technology are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing technology and improving electronic devices. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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