The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2004
Filed:
Mar. 04, 2003
Kwang-Jin Moon, Yongin-si, KR;
Gil-Heyun Choi, Yongin-si, KR;
Sang-Bum Kang, Seoul, KR;
Hee-Sook Park, Seoul, KR;
Samsung Electronics Co., LTD, , KR;
Abstract
After a processing chamber is used to deposit a refractory metal film on a substrate, the chamber is plasma-treated with a gas including either nitrogen and/or hydrogen and in-situ cleaned. By plasma-treating the chamber with a gas including nitrogen, the refractory metal film that forms on interior surfaces of the chamber during substrate processing is nitrided. The nitrided refractory metal film can be removed from the chamber during the in-situ cleaning. By plasma-treating the chamber with a gas including hydrogen, reaction by-products generated in the chamber is diluted removed. The chamber may be plasma-treated in a gas ambient including both nitrogen and hydrogen. Also, the plasma treatment may be performed before and after the in-situ cleaning.