The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2009
Filed:
Jan. 17, 2006
Hee-sook Park, Seoul, KR;
Gil-heyun Choi, Gyeonggi-do, KR;
Chang-won Lee, Gyeonggi-do, KR;
Byung-hak Lee, Gyeonggi-do, KR;
Sun-pil Youn, Seoul, KR;
Dong-chan Lim, Seoul, KR;
Jae-hwa Park, Gyeonggi-do, KR;
Jang-hee Lee, Seoul, KR;
Woong-hee Sohn, Gyeonggi-do, KR;
Hee-Sook Park, Seoul, KR;
Gil-Heyun Choi, Gyeonggi-do, KR;
Chang-Won Lee, Gyeonggi-do, KR;
Byung-Hak Lee, Gyeonggi-do, KR;
Sun-Pil Youn, Seoul, KR;
Dong-Chan Lim, Seoul, KR;
Jae-Hwa Park, Gyeonggi-do, KR;
Jang-Hee Lee, Seoul, KR;
Woong-Hee Sohn, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.