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For the Inventor, By the Inventor

Hefei, China

Bingyu Zhu

USPTO Granted Patents = 13 

Average Co-Inventor Count = 2.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal13 out of 1,649 
 
Changxin Memory Technologies, Inc.
 patents

Years Active: 2023-2025

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13 patents (USPTO):Explore Patents
1. 12356609 - Buried bit line structure, method for fabricating buried bit line structure, and memory (2025-07-08),
2. 12284802 - Semiconductor structure and method for manufacturing semiconductor structure (2025-04-21),
3. 12165874 - Semiconductor structure and forming method thereof (2024-12-10),
4. 12114484 - Buried bit line structure, manufacturing method thereof, and semiconductor structure (2024-10-08),
5. 12112939 - Cleaning process and semiconductor processing method (2024-10-08),
6. 12108594 - Semiconductor device manufacturing method comprising first conductive layer with increased roughness in array region (2024-10-01),
7. 12082392 - Semiconductor structure and method for preparing seminconductor structure (2024-09-03),
8. 12068361 - Semiconductor structure with stacked capacitors (2024-08-20),
9. 12002707 - Semiconductor structure and manufacturing method thereof (2024-06-04),
10. 11990331 - Method for forming silicon dioxide film and method for forming metal gate (2024-05-21),
11. 11984357 - Semiconductor structure and its manufacturing method (2024-05-14),
12. 11895821 - Semiconductor structure and manufacturing method thereof (2024-02-06),
13. 11825646 - Method for manufacturing semiconductor structure and semiconductor structure (2023-11-21),

Title: Innovator Bingyu Zhu: Advancements in Semiconductor Technology

Introduction

Bingyu Zhu is a notable inventor hailing from Hefei, China. With a remarkable portfolio that includes 13 patents, Zhu has made significant contributions to the field of semiconductor technology. His innovative approaches have paved the way for enhanced electrical conductivity and the efficient manufacturing of semiconductor structures.

Latest Patents

Among Zhu's latest patents are the "Buried Bit Line Structure, Method for Fabricating Buried Bit Line Structure, and Memory." This invention discloses a buried bit line structure featuring a substrate with a bit line trench that is filled with bit line metal. The design incorporates a bit line contact positioned on this metal, characterized by an arc-shaped contact surface that increases the contact area and enhances electrical conductivity. Additionally, he has patented a method for manufacturing a semiconductor structure, which involves creating bit lines and support patterns to form air gaps that improve device performance.

Career Highlights

Bingyu Zhu’s innovative career is closely tied to his work at Changxin Memory Technologies, Inc. His expertise in semiconductor fabrication techniques has placed him at the forefront of the industry. Zhu’s patents showcase a blend of creativity and practical application, allowing for advancements that benefit not only his company but also the broader technology landscape.

Collaborations

Throughout his career, Zhu has collaborated with esteemed colleagues such as Jingwen Lu and Zhaopei Cui. These partnerships have fostered a dynamic environment for innovation, allowing for the exchange of ideas and collective problem-solving in the challenging realm of semiconductor development.

Conclusion

Bingyu Zhu continues to be a driving force in semiconductor innovation with his extensive patent portfolio and collaborations with talented colleagues. His work illustrates the potential for integrated technologies to enhance electronic devices, contributing to the advancement of memory technologies and semiconductor applications worldwide.

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