The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2024

Filed:

Sep. 10, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Bingyu Zhu, Hefei, CN;

Hai-Han Hung, Hefei, CN;

Jingwen Lu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76237 (2013.01); H01L 21/26506 (2013.01); H01L 21/266 (2013.01);
Abstract

Provided are a semiconductor structure and a manufacturing method thereof. The manufacturing method for the semiconductor structure comprises: providing a substrate, wherein the substrate comprises active regions and isolation regions each located between the adjacent active regions, and each of the active regions comprises corner regions adjacent to the isolation regions; performing a doping process to implant doping ions into the corner regions, wherein the doping ions are configured to slow down an oxidation rate of the corner regions; and performing a removing process to remove the oxidized portion of the substrate after the doping process, wherein during the removing process, a side wall of each of the corner regions is exposed from a structure in the isolation region.


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