The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 21, 2023

Filed:

Oct. 12, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Bingyu Zhu, Hefei, CN;

Jingwen Lu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01);
Abstract

A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes the following steps. A bit line structure is formed on a substrate. Each of the bit lines is provided with an insulation block on a side facing away from the substrate. A shielding portion is formed on a top of the insulation block that faces away from the substrate. A projection area of the shielding portion on the substrate is larger than a projection area of the insulation block on the substrate. An insulation sidewall is formed on a sidewall of the bit line and a sidewall of the insulation block, and a gap extending to the substrate is formed within the insulation sidewall corresponding to the shielding portion.


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