The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 06, 2024

Filed:

Sep. 07, 2021
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Jingwen Lu, Hefei, CN;

Haihan Hung, Hefei, CN;

Bingyu Zhu, Hefei, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/66 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/312 (2023.02); H01L 29/6656 (2013.01); H10B 12/482 (2023.02);
Abstract

A semiconductor structure and a manufacturing method thereof are provided. The manufacturing method of the semiconductor structure includes: providing a substrate; forming on an upper surface of the substrate first patterns each including a first main body and a first flank wall covering a sidewall of the first main body; forming a filling layer which covers the first flank wall and fills a gap between adjacent first patterns; and etching a top of each of the first patterns to obtain second main bodies, second flank walls and protrusions located on upper surfaces of the second flank walls, the second flank wall covering a sidewall of the second main body, and a top of the protrusion being at least higher than a top of the second main body.


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