The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Aug. 10, 2021
Applicant:
Changxin Memory Technologies, Inc., Hefei, CN;
Inventors:
Assignee:
Changxin Memory Technologies, Inc., Hefei, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02332 (2013.01); H01L 21/02334 (2013.01); H01L 21/324 (2013.01);
Abstract
A method for forming a silicon dioxide film and a method for forming a metal gate are provided. The method for forming a silicon dioxide film includes: forming a silicon dioxide layer on a semiconductor substrate, performing a nitrogen treatment to the silicon dioxide layer to convert the silicon dioxide layer of partial thickness into a mixed layer of silicon nitride and silicon oxynitride; and removing the mixed layer to form a silicon dioxide film on the semiconductor substrate.