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Hsinchu, Taiwan

Worldwide Semiconductor Manufacturing Corporation

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USPTO Granted Patents = 112

Forward Citations = 1,073

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60 inventors (with patents filed for the assignee):

Chine-Gie Lou (32 out of 73 patents)

Kung Linliu (13 out of 22 patents)

Yeur-Luen Tu (12 out of 239 patents)

4. Min-hwa Chi (9 out of 48 patents)

5. Ling-Sung Wang (8 out of 106 patents)

6. Ko-Hsing Chang (6 out of 31 patents)

7. Chia-Chen Liu (6 out of 9 patents)

8. Chih-Ming Chen (4 out of 214 patents)

9. Mai-Ru Kuo (4 out of 4 patents)

10. Chih Ming Chen (4 out of 7 patents)

11. Sen-Nan Lee (4 out of 4 patents)

12. Pao-Kang Niu (3 out of 11 patents)

13. Jyh-Ren Wu (3 out of 7 patents)

14. Dahcheng Lin (3 out of 22 patents)

15. Ching-Nan Yang (3 out of 9 patents)

Core Competencies:

DRAM Capacitors

Flash Memory Cells

Chemical-Mechanical Polishing

Embedded DRAM

Dual Damascene Process

Anti-Reflective Coating

Shallow Trench Isolation

Conductive Layers

Thermal Conductivity

Self-Aligned Structures

Capacitor Fabrication

Interconnect Structures

112 patents: Sort by Forward Citations

1. 6647524 - Built-in-self-test circuit for RAMBUS direct RDRAM (2003-11-11),

2. 6630051 - Auto slurry deliver fine-tune systems for chemical-mechanical-polishing process and method of using the system (2003-10-07),

3. 6524909 - Self-aligned fabricating process and structure of source line of etox flash memory (2003-02-25),

4. 6492069 - Method for forming an attenuated phase-shifting mask (2002-12-10),

5. 6479401 - Method of forming a dual-layer anti-reflective coating (2002-11-12),

6. 6432794 - Process for fabricating capacitor (2002-08-13),

7. 6413856 - Method of fabricating dual damascene structure (2002-07-02),

8. 6410441 - Auto slurry deliver fine-tune system for chemical-mechanical-polishing process and method of using the system (2002-06-25),

9. 6399482 - Method and structure for a conductive and a dielectric layer (2002-06-04),

10. 6343977 - Multi-zone conditioner for chemical mechanical polishing system (2002-02-05),

11. 6338993 - Method to fabricate embedded DRAM with salicide logic cell structure (2002-01-15),

12. 6303955 - Dynamic random access memory with slanted active regions (2001-10-16),

13. 6300240 - Method for forming bottom anti-reflective coating (BARC) (2001-10-09),

14. 6297144 - Damascene local interconnect process (2001-10-02),

15. 6287957 - Self-aligned contact process (2001-09-11),

Company Overview

Worldwide Semiconductor Manufacturing Corporation, headquartered in Hsinchu, Taiwan, specializes in advanced memory fabrication technologies. The company focuses on the development and manufacturing of critical components such as DRAM capacitors and flash memory cells, employing sophisticated techniques like chemical-mechanical polishing and the dual damascene process. With expertise in embedded DRAM and shallow trench isolation, WSMC plays a vital role in the semiconductor industry, driving innovation in memory solutions and enhancing performance across various applications.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

112 Patents

#61 in Hsinchu

#209 in Taiwan

#7,058 in the World

Hsinchu, Taiwan

Worldwide Semiconductor Manufacturing Corporation

Forward Citations = 1,073

60 inventors:

Chine-Gie Lou (32 out of 73 patents)

Kung Linliu (13 out of 22 patents)

Yeur-Luen Tu (12 out of 239 patents)

4. Min-hwa Chi (9 out of 48 patents)

5. Ling-Sung Wang (8 out of 106 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Worldwide Semiconductor Manufacturing Corporation. Retrieved from https://idiyas.com/company/worldwide-semiconductor-manufacturing

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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