The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 04, 2002

Filed:

Oct. 29, 1999
Applicant:
Inventor:

Chine-Gie Lou, Hsinchu Hsien, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract

A structure and method for conductive layer and inter-metal dielectric layer is disclosed. Firstly, a conductive layer and an anti-reflection coating layer are formed on a substrate. A photolithography and an etching is then carried out to form conductive structure. Dielectric spacers are then formed on the sidewalls of the conductive structure. An organic dielectric layer is coated on the semiconductor substrate and etched back with the anti-reflection coating layer as stopping layer. The anti-reflection coating layer is then removed. An inorganic dielectric layer and a dielectric cap layer are deposited on the conductive structure and the organic dielectric layer. The structure fabricated comprises a conductive layer formed on a substrate; dielectric spacers formed on the sidewalls of the conductive layer; an organic dielectric layer formed to fill the regions among the conductive layer; an inorganic dielectric layer formed on the conductive layer and the organic dielectric layer; a planarized cap layer formed on the inorganic dielectric layer.


Find Patent Forward Citations

Loading…