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For the Inventor, By the Inventor

Hsinchu, Taiwan

Min-hwa Chi

This inventor holds 48 USPTO granted patents, primarily in Silicon-On-Insulator Technology. Top assignees: Vanguard International Semiconductor Corporation, Taiwan Semiconductor Manufacturing Comp. Ltd., Worldwide Semiconductor Manufacturing Corporation. Active years: 1998-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Min-hwa Chi. Retrieved from https://idiyas.com/inventor/min-hwa-chi-y45c6ehg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 48

% Patents Active = 95.8

Average Co-Inventor Count = 1.2

ph-index = 15

Forward Citations = 772(Granted Patents)


Company Filing History:

goldMedal19 out of 1,132 
 
Vanguard International Semiconductor Corporation
 patents
silverMedal18 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
bronzeMedal9 out of 112 
 
Worldwide Semiconductor Manufacturing Corporation
 patents
4. 1 out of 2 
 
Worldwide Semiconductor Corporation
 patents
5. 1 out of 4 
 
Worldwide Semiconductor Mfg. Corp.
 patents

Years Active: 1998-2006

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Areas of Expertise:
Silicon-On-Insulator
DRAM Fabrication
Flash Memory
Capacitor Design
Transistor Circuits
Memory Cell Structures
Bipolar Transistors
Charge Pumps
Low Voltage Operation
Mixed-Signal Applications
High-Speed Memory
Voltage References
48 patents (USPTO):Explore Patents
1. 7078766 - Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents (2006-07-18),
2. 7002213 - Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents (2006-02-21),
3. 6822283 - Low temperature MIM capacitor for mixed-signal/RF applications (2004-11-23),
4. 6555442 - Method of forming shallow trench isolation with rounded corner and divot-free by using disposable spacer (2003-04-29),
5. 6552397 - Charge pump device formed on silicon-on-insulator and operation method (2003-04-22),
6. 6528366 - Fabrication methods of vertical metal-insulator-metal (MIM) capacitor for advanced embedded DRAM applications (2003-03-04),
7. 6486025 - Methods for forming memory cell structures (2002-11-26),
8. 6373090 - Scheme of capacitor and bit-line at same level and its fabrication method for 8F2 DRAM cell with minimum bit-line coupling noise (2002-04-16),
9. 6288943 - Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gate (2001-09-11),
10. 6281550 - Transistor and logic circuit of thin silicon-on-insulator wafers based on gate induced drain leakage currents (2001-08-28),
11. 6262447 - Single polysilicon DRAM cell and array with current gain (2001-07-17),
12. 6255713 - Current source using merged vertical bipolar transistor based on gate induced gate leakage current (2001-07-03),
13. 6240015 - Method for reading 2-bit ETOX cells using gate induced drain leakage current (2001-05-29),
14. 6200852 - Method to fabricate DRAM capacitor (2001-03-13),
15. 6184548 - DRAM cell and array to store two-bit data having merged stack capacitor and trench capacitor (2001-02-06),

Title: The Innovative Contributions of Min-hwa Chi

Introduction

Min-hwa Chi is a prominent inventor based in Hsinchu, Taiwan, recognized for his substantial contributions to the field of semiconductor technology. With a remarkable portfolio of 48 patents, Chi continues to push the boundaries of innovation, particularly in the realm of transistor and logic circuit development.

Latest Patents

Among his notable inventions, Chi's latest patent focuses on a "Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents." This groundbreaking transistor structure, fabricated on thin silicon-on-insulator (SOI) wafers, features gated n+ and p+ junctions. These junctions function as switches that manage the gate induced drain leakage (GIDL) currents, allowing for the dynamic control of the floating body potential, thereby serving crucial roles as output nodes. The design can efficiently support basic logic circuits like NAND and NOR gates, proving useful for high-performance, low-voltage, and low-power VLSI circuits on SOI wafers.

Career Highlights

Chi's career has been significantly shaped by his roles in leading semiconductor firms, including Vanguard International Semiconductor Corporation and Taiwan Semiconductor Manufacturing Company. His innovations in transistor design have revolutionized the applications of logic circuits in various electronic devices.

Collaborations

Throughout his career, Min-hwa Chi has collaborated with esteemed professionals such as Yeur-Luen Tu and Chih-Yuan Lu. These partnerships have fostered an environment of shared knowledge and innovation, enabling the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Min-hwa Chi's contributions to the field of semiconductor technology, particularly through his patent portfolio and collaborations, highlight his status as an influential inventor. His work not only advances the understanding of transistor operations but also paves the way for future innovations in electronic circuits, ensuring his lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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