The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 2001
Filed:
Jul. 12, 2000
Applicant:
Inventor:
Min-hwa Chi, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Corporation, Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/604 ;
Abstract
A method of reading a 2-bit p-channel memory cell having a p+ drain, a p+ source, a control gate, and a floating gate formed from non-connecting hemispherical silicon grain (HSG) islands. The p+ drain and the p+ source is formed in an n-well. The method comprises: applying a positive voltage to the control gate to generate a gate induced drain leakage (GIDL) current; and measuring a drain GIDL current at the drain and a source GIDL current at the source simultaneously to determine the 2-bit data stored in the memory cell.