The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Jun. 23, 2000
Min-hwa Chi, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A charge pump formed in a silicon-on-insulator (SOI) substrate is disclosed. The charge pump comprises a SOI layer formed on a substrate. Formed in the silicon of the SOI is a first p-body and a second p-body. Also formed in the silicon is a n+ region that extends down to the insulator so that the n+ region separates the first p-body and second p-body. Finally, a gate structure is formed atop of a portion of the first p-body and a portion of the n+ region. The gate structure is separated from the 1 p-body and n+ region by gate oxide, and it serves as charge pump capacitor. Both the diode turn-on (when gate is pulsing high and forward biasing the p-body to n+ junction), and GIDL current (when the gate is pulsing low, and generates GIDL hole currents from n+ surface to p-body) will result in a “short” of the p-body and n+ region; this ensures the proper operation of charge pump.