The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Oct. 20, 1999
Min-hwa Chi, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A two-dimensional array of single polysilicon DRAM cells is disclosed. The array comprises a plurality of DRAM cells arranged in a two-dimensional matrix, wherein each of the DRAM cells comprises: a deep n-well in a silicon substrate; a p-well within the deep n-well; a gate structure over and straddling the deep n-well and the p-well; and a n,region within the p-well and adjacent to a sidewall of the gate structure. The array is connected together by a plurality of column bitlines, each of the column bitlines connected to the n,regions of all of the DRAM cells that are in a common column. Further, a plurality of row wordlines are provided, each of the row wordlines connected to the gate structures of all of the DRAM cells that are in a common row.