The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2002
Filed:
Jan. 14, 2002
Yuan-Hung Liu, Hsin-Chu, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Min-Hwa Chi, Hsinchu, TW;
Chih-Hsing Yu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a first of a pair of methods for forming a memory cell structure there is employed a sacrificial spacer layer formed adjacent a capacitor structure and subsequently stripped therefrom to provide an air gap void interposed between a bitline stud layer and the capacitor structure. Within a second of the pair of methods for forming a memory cell structure there is employed a topographically variable thickness masking layer as a self aligned mask layer for forming a patterned capacitor plate layer from a topographic blanket capacitor plate layer. The methods provide for readily forming the memory cell structure with enhanced performance.