The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Jul. 27, 1999
Min-hwa Chi, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A current source formed in a p-type substrate is disclose. First, a deep n-well is formed within the p-type substrate and a buried n+ layer is formed within the deep n-well. Next, a p-well is formed within the deep n-well and atop the buried n+ layer. The p-well and deep n-well are then surrounded by an isolation structure that extends from the surface of the substrate to below the level of the p-well. A n+ reference structure is formed within the p-well and a gate is formed above the p-well, the gate separated from the substrate by a thin oxide layer, the gate extending over at least a portion of the n+ reference structure. Finally, a n+ output structure is formed within the p-well. An input reference current is provided to the n+ reference structure and an output current is provided by the n+ output structure.