Hsinchu, Taiwan

Dahcheng Lin


Average Co-Inventor Count = 2.0

ph-index = 9

Forward Citations = 224(Granted Patents)


Location History:

  • Hsinchu, TW (1999 - 2002)
  • Kaohsiung, TW (2004)

Company Filing History:


Years Active: 1999-2004

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22 patents (USPTO):Explore Patents

Title: **Dahcheng Lin: A Visionary Innovator in Semiconductor Technology**

Introduction

Dahcheng Lin, based in Hsinchu, Taiwan, is a prominent inventor with an impressive portfolio of 22 patents. His work primarily focuses on advancements in semiconductor technology, particularly in the fabrication of mixed-signal and RF applications. Lin's innovative approaches have positioned him as a key figure in the electronics industry.

Latest Patents

Among his latest contributions to the field are two notable patents. The first patent involves a **Low Temperature MIM Capacitor for Mixed-Signal/RF Applications**, which outlines a method for fabricating an MIM (Metal-Insulator-Metal) capacitor on a substrate. This technique includes utilizing spacers formed on a planar metal surface to enhance the electrode area's gain factor. The innovative design results in a roughened surface that can significantly benefit future capacitor processes.

The second patent details a **Method of Planarizing Peripheral Circuit Region of a DRAM**. This process involves multiple layers, including a first oxide layer and silicon nitride layer, to achieve effective planarization in DRAM structures. The method outlines the sequential formation of polysilicon plugs within a crown-shaped capacitor region, highlighting a comprehensive approach to enhancing the efficiency of DRAM technology.

Career Highlights

Dahcheng Lin has held significant positions in leading semiconductor companies, notably at Vanguard International Semiconductor Corporation and Taiwan Semiconductor Manufacturing Company Limited. His experience in these organizations has allowed him to contribute substantially to the development of advanced semiconductor solutions that address contemporary technological challenges.

Collaborations

Throughout his career, Lin has collaborated with esteemed peers in the industry, including Jung-Ho Chang and Hsi-Chuan Chen. These collaborations have fostered an environment of innovation, enabling him to enhance his research and development efforts in semiconductor technology.

Conclusion

Dahcheng Lin continues to be a driving force in the innovation of semiconductor technologies. His remarkable achievements in patent contributions reflect his commitment to advancing the industry. As technology progresses, Lin's work will likely have a lasting impact on the fields of mixed-signal and RF applications.

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