The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 19, 2000
Filed:
Apr. 07, 1999
Applicant:
Inventors:
Dahcheng Lin, Hsinchu, TW;
Chingfu Lin, Taipei, TW;
Assignee:
Taiwan Semiconductor Manufacturing Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438705 ; 438255 ; 438398 ; 438964 ; 438719 ;
Abstract
A method of forming hemispherical grain (HSG) silicon is disclosed. The method comprises the steps of: forming a doped amorphous silicon layer on a substrate; seeding and annealing the amorphous silicon layer until HSG silicon is formed; enlarging the HSG silicon grains during the annealing stage; and performing a chemical dry etch on the HSG silicon to remove an undoped silicon layer from the surface of the HSG silicon.